Redox-active ferrocene-containing iridium(III) complex for non-volatile flash memory-Reference-Cited by-同舟云学术

Redox-active ferrocene-containing iridium(III) complex for non-volatile flash memory

Published:2020-10 Issue: Volume:85 Page:105815
ISSN:1566-1199
Container-title:Organic Electronics
language:en
Short-container-title:Organic Electronics

Author:

Yang Baojie,Deng Yongjing,Tao Peng,Zhao Menglong,Zhao Weiwei,Tang Runze,Ma Chenxi,Tan Qi,Liu Shujuan,Zhao Qiang

Funder

National Funds for Distinguished Young Scientists

National Natural Science Foundation of China

Natural Science Foundation of Jiangsu Province

Priority Academic Program Development of Jiangsu Higher Education Institutions

China Postdoctoral Science Foundation

Jiangsu Planned Projects for Postdoctoral Research

Nanjing University of Posts and Telecommunications

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Materials Chemistry,Condensed Matter Physics,General Chemistry,Biomaterials,Electronic, Optical and Magnetic Materials

Reference56 articles.

1. Covalent Modification of Graphene Oxide with Poly(N-vinylcarbazole) Containing Pendant Azobenzene Chromophores for Nonvolatile Ternary memories

2. An all-in-one memory cell based on a homopolymer with a pyrene side chain and its volatile and nonvolatile resistive switch behaviors

3. Bidirectional multiple negative differential resistance (BM-NDR): An interplay between interface resistance and redox reaction

4. Tuning of electron density distribution on molecular conjugated skeleton to improve intermolecular aggregation style and device memory performance

5. Low-voltage programmable/erasable high performance flexible organic transistor nonvolatile memory based on a tetratetracontane passivated ferroelectric terpolymer

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