Optimization of gate-bias stability and gas-sensing properties of triethylsilylethynyl anthradithiophene micro-strip field-effect transistors by incorporating insulating polymer-Reference-Cited by-同舟云学术

Optimization of gate-bias stability and gas-sensing properties of triethylsilylethynyl anthradithiophene micro-strip field-effect transistors by incorporating insulating polymer

Published:2020-10 Issue: Volume:85 Page:105878
ISSN:1566-1199
Container-title:Organic Electronics
language:en
Short-container-title:Organic Electronics

Author:

Kwak Do Hun,Choi Hyun Ho,Anthony John E.,Kim Seunghyun,Chae Huijeong,Hwang Jinhyun,Lee Shichoon,Park Hui Joon,Kim Bong-Gi,Lee Wi Hyoung^ORCID

Funder

Konkuk University

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Materials Chemistry,Condensed Matter Physics,General Chemistry,Biomaterials,Electronic, Optical and Magnetic Materials

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