Modelling and simulation of gate leakage currents of solution-processed OTFT-Reference-Cited by-同舟云学术

Modelling and simulation of gate leakage currents of solution-processed OTFT

Published:2014-03 Issue:3 Volume:15 Page:829-834
ISSN:1566-1199
Container-title:Organic Electronics
language:en
Short-container-title:Organic Electronics

Author:

Hengen Stefan,Alt Milan,Hernandez-Sosa Gerardo,Giehl Jürgen,Lemmer Uli,Mechau Norman

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Materials Chemistry,Condensed Matter Physics,General Chemistry,Biomaterials,Electronic, Optical and Magnetic Materials

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4. Gate induced leakage and drain current offset in organic thin film transistors;Jia;Org. Electron.,2006

5. Leakage conduction mechanism of top-contact organic thin film transistors;Lin;Synth. Met.,2010

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