Restraints in low dimensional organic semiconductor devices at high current densities-Reference-Cited by-同舟云学术

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Restraints in low dimensional organic semiconductor devices at high current densities

Published:2014-01 Issue:1 Volume:15 Page:211-215
ISSN:1566-1199
Container-title:Organic Electronics
language:en
Short-container-title:Organic Electronics

Author:

Pfattner Raphael,Moreno César,Voz Cristobal,Alcubilla Ramón,Rovira Concepció,Puigdollers Joaquim,Mas-Torrent Marta

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Materials Chemistry,Condensed Matter Physics,General Chemistry,Biomaterials,Electronic, Optical and Magnetic Materials

Reference29 articles.

1. The Concept of “Threshold Voltage” in Organic Field-Effect Transistors

2. Field-induced mobility degradation in pentacene thin-film transistors

3. Overestimation of the field-effect mobility via transconductance measurements and the origin of the output/transfer characteristic discrepancy in organic field-effect transistors

4. Temperature and gate voltage dependence of hole mobility in polycrystalline oligothiophene thin film transistors

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Tuning Crystal Ordering, Electronic Structure, and Morphology in Organic Semiconductors: Tetrathiafulvalenes as a Model Case;Advanced Functional Materials;2015-10-01

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