Impact of organic inter-layer dielectric for improvement in mechanical flexibility of self-aligned coplanar in-Ga-Zn-O thin-film transistor-Reference-Cited by-同舟云学术

Impact of organic inter-layer dielectric for improvement in mechanical flexibility of self-aligned coplanar in-Ga-Zn-O thin-film transistor

Published:2021-09 Issue: Volume:96 Page:106223
ISSN:1566-1199
Container-title:Organic Electronics
language:en
Short-container-title:Organic Electronics

Author:

Kim Hyo-Eun,Jang Hye-Won,Furuta Mamoru,Yoon Jeonghan,Oh Saeroonter,Yoon Sung-Min

Funder

Samsung Group

Kyung Hee University

Korea Evaluation Institute of Industrial Technology

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Materials Chemistry,Condensed Matter Physics,General Chemistry,Biomaterials,Electronic, Optical and Magnetic Materials

Reference35 articles.

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2. Self-aligned indium–gallium–zinc oxide thin-film transistor with source/drain regions doped by implanted arsenic;Chen;IEEE Electron. Device Lett.,2013

3. Effect of interfacial excess oxygen on positive-bias temperature stress instability of self-aligned coplanar InGaZnO thin-film transistors;Oh;Appl. Phys. Lett.,2016

4. Self-aligned coplanar top gate in–Ga–ZnO thin-film transistors exposed to various DUV irradiation energies;Ryu;IEEE Trans. Electron. Dev.,2016

5. Self-aligned top-gate oxide thin-film transistor formed by aluminum reaction method;Morosawa;Jpn. J. Appl. Phys.,2011

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