Effect of interfacial excess oxygen on positive-bias temperature stress instability of self-aligned coplanar InGaZnO thin-film transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4945404
Reference15 articles.
1. 64.2: Panel and Circuit Designs for the World's First 65-inch UHD OLED TV
2. 64.3: Development of 55-inch UHD AMOLED TV
3. 63.4: High-Performance 4K x 2K 65-in. TV with BCE-Type Oxide TFTs
4. Present status of amorphous In–Ga–Zn–O thin-film transistors
5. 69.2:Distinguished Paper: High Reliable a-IGZO TFTs with Self-Aligned Coplanar Structure for Large-Sized Ultrahigh-Definition OLED TV
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