A solvent-free lift-off method for realizing vertical organic transistors with low leakage current and high ON/OFF ratio-Reference-Cited by-同舟云学术

A solvent-free lift-off method for realizing vertical organic transistors with low leakage current and high ON/OFF ratio

Published:2016-04 Issue: Volume:31 Page:227-233
ISSN:1566-1199
Container-title:Organic Electronics
language:en
Short-container-title:Organic Electronics

Author:

Fang Xiang,Lin Chia-Ho,Sun Yung-Tai,Chin Huei-Tzu,Zan Hsiao-Wen,Meng Hsin-Fei,Horng Sheng-Fu,Wang Lon A.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Materials Chemistry,Condensed Matter Physics,General Chemistry,Biomaterials,Electronic, Optical and Magnetic Materials

Reference21 articles.

1. Fabrication of 60-nm transistors on 4-in. wafer using nanoimprint at all lithography levels

2. λ3/1000 Plasmonic Nanocavities for Biosensing Fabricated by Soft UV Nanoimprint Lithography

3. Enhanced performance of solar cells with anti-reflection layer fabricated by nano-imprint lithography

4. Inkjet printing narrow electrodes with <50 μm line width and channel length for organic thin-film transistors

5. Self-aligned flexible organic thin-film transistors with gates patterned by nano-imprint lithography

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4. Synthesis and Characterization of Cross-Linked Nanocomposite as a Gate Dielectric for p-Type Silicon Field-Effect Transistor;Journal of Electronic Materials;2018-03-28

5. The low threshold voltage n-type silicon transistors based on a polymer/silica nanocomposite gate dielectric: The effect of annealing temperatures on their operation;Applied Surface Science;2017-09