Nonvolatile photoelectric memory with CsPbBr3 quantum dots embedded in poly(methyl methacrylate) as charge trapping layer-Reference-Cited by-同舟云学术

Nonvolatile photoelectric memory with CsPbBr3 quantum dots embedded in poly(methyl methacrylate) as charge trapping layer

Published:2020-02 Issue: Volume:77 Page:105461
ISSN:1566-1199
Container-title:Organic Electronics
language:en
Short-container-title:Organic Electronics

Author:

Li Qingyan^ORCID,Li Tengteng,Zhang Yating^ORCID,Yu Yu^ORCID,Chen Zhiliang,Jin Lufan,Li Yifan,Yang Yue,Zhao Hongliang,Li Jie,Yao Jianquan

Funder

National Natural Science Foundation of China

Basic Research Program of Shenzhen

National Key Research and Development Program of China

Wenzhou City Governmental Public Industrial Technology Project

Open Fund of Key laboratory of Opto-electronic Information Technology

Ministry of Education

Tianjin University

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Materials Chemistry,Condensed Matter Physics,General Chemistry,Biomaterials,Electronic, Optical and Magnetic Materials

Reference47 articles.

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2. Nonvolatile perovskite-based photomemory with a multilevel memory behavior;Chen;Adv. Mater.,2017

3. Influence of polymeric electrets on the performance of derived hybrid perovskite-based photo-memory devices;Ercan;Nanoscale,2018

4. High performance flexible nonvolatile memory based on vertical organic thin film transistor;Hu;Adv. Funct. Mater.,2017

5. High-performance nonvolatile organic transistor memory using quantum dots-based floating gate;Hu;IEEE Trans. Electron Devices,2017

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