Investigation of the sensing mechanism of dual-gate low-voltage organic transistor based pressure sensor-Reference-Cited by-同舟云学术

Investigation of the sensing mechanism of dual-gate low-voltage organic transistor based pressure sensor

Published:2019-12 Issue: Volume:75 Page:105431
ISSN:1566-1199
Container-title:Organic Electronics
language:en
Short-container-title:Organic Electronics

Author:

Ogunleye Olamikunle Osinimu,Sakai Heisuke,Ishii Yuya,Murata Hideyuki^ORCID

Funder

JSPS KAKENHI

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Materials Chemistry,Condensed Matter Physics,General Chemistry,Biomaterials,Electronic, Optical and Magnetic Materials

Reference30 articles.

1. Ultralow Voltage Pressure Sensors Based on Organic FETs and Compressible Capacitors

2. Flexible polymer transistors with high pressure sensitivity for application in electronic skin and health monitoring

3. Flexible suspended gate organic thin-film transistors for ultra-sensitive pressure detection

4. Highly sensitive flexible pressure sensors with microstructured rubber dielectric layers

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