Origin of charge generation efficiency of metal oxide p-dopants in organic semiconductors-Reference-Cited by-同舟云学术

Origin of charge generation efficiency of metal oxide p-dopants in organic semiconductors

Published:2011-06 Issue:6 Volume:12 Page:950-954
ISSN:1566-1199
Container-title:Organic Electronics
language:en
Short-container-title:Organic Electronics

Author:

Lee Jae-Hyun,Kim Hyun-Mi,Kim Ki-Bum,Kim Jang-Joo

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Materials Chemistry,Condensed Matter Physics,General Chemistry,Biomaterials,Electronic, Optical and Magnetic Materials

Reference23 articles.

1. Low driving voltage and high stability organic light-emitting diodes with rhenium oxide-doped hole transporting layer

2. P-185: Low-Drive-Voltage OLEDs with a Buffer Layer Having Molybdenum Oxide

3. Highly Efficient Organic Devices Based on Electrically Doped Transport Layers

4. Use of a High Electron-Affinity Molybdenum Dithiolene Complex to p-Dope Hole-Transport Layers

5. High efficiency p-i-n top-emitting organic light-emitting diodes with a nearly Lambertian emission pattern

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