Low-temperature and rapid photo-annealing process for metal-oxide thin-film transistors using combined excimer deep-ultraviolet and intensely pulsed light irradiation-Reference-Cited by-同舟云学术

Low-temperature and rapid photo-annealing process for metal-oxide thin-film transistors using combined excimer deep-ultraviolet and intensely pulsed light irradiation

Published:2022-05 Issue: Volume:104 Page:106476
ISSN:1566-1199
Container-title:Organic Electronics
language:en
Short-container-title:Organic Electronics

Author:

Shin Jaehak^ORCID,Kim Jaemin,Park Sungmin,Kim Soo Jin,Lim Jung Ah,Ko Sunglim^ORCID

Funder

Ministry of Science and ICT, South Korea

National Research Foundation of Korea

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Materials Chemistry,Condensed Matter Physics,General Chemistry,Biomaterials,Electronic, Optical and Magnetic Materials

Reference17 articles.

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3. Sol-gel metal oxide dielectrics for all-solution-processed electronics;Park;Mater. Sci. Eng. R Rep.,2017

4. Ultra-high-speed intense pulsed-light irradiation technique for high-performance zinc oxynitride thin-film transistors;Jeong;ACS Appl. Mater. Interfaces,2019

5. Rapid low-temperature processing of metal-oxide thin film transistors with combined far ultraviolet and thermal annealing;Leppaniemi;Appl. Phys. Lett.,2014

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