A deterministic solver for the transport of the AlGaN/GaN 2D electron gas including hot-phonon and degeneracy effects-Reference-Cited by-同舟云学术

A deterministic solver for the transport of the AlGaN/GaN 2D electron gas including hot-phonon and degeneracy effects

Published:2005-12 Issue:2 Volume:210 Page:519-534
ISSN:0021-9991
Container-title:Journal of Computational Physics
language:en
Short-container-title:Journal of Computational Physics

Author:

Galler M.,Schürrer F.

Publisher

Elsevier BV

Subject

Computer Science Applications,Physics and Astronomy (miscellaneous),Applied Mathematics,Computational Mathematics,Modelling and Simulation,Numerical Analysis

Reference18 articles.

1. Nitride Semiconductors and Devices;Morkoç,1999

2. Monte Carlo simulation of hot-phonon and degeneracy effects in the AlGaN/GaN two-dimensional electron gas channel;Ramonas;Semicond. Sci. Technol.,2003

3. Transport in Nanostructures;Ferry,1997

4. Physical Kinetics;Lifschitz,1981

5. A deterministic solution approach for the coupled system of transport equations for the electrons and phonons in polar semiconductors;Galler;J. Phys. A. Math. Gen.,2003

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Theoretical Study of Electron Transport Properties in GaN-Based HEMTs Using a Deterministic Multi-Subband Boltzmann Transport Equation Solver;IEEE Transactions on Electron Devices;2019-09

2. Electron mobility calculation for two-dimensional electron gas in InN/GaN digital alloy channel high electron mobility transistors;Japanese Journal of Applied Physics;2019-05-14

3. Electron mobility of two-dimensional electron gas in InGaN heterostructures: Effects of alloy disorder and random dipole scatterings;Japanese Journal of Applied Physics;2018-02-20

4. A parallel deterministic solver for the Schrödinger–Poisson–Boltzmann system in ultra-short DG-MOSFETs: Comparison with Monte-Carlo;Computers & Mathematics with Applications;2014-05

5. Modeling and simulation of electronic structure, material interface and random doping in nano-electronic devices;Journal of Computational Physics;2010-06