Numerical problems in semiconductor simulation using the hydrodynamic model: a second-order finite difference scheme-Reference-Cited by-同舟云学术

Numerical problems in semiconductor simulation using the hydrodynamic model: a second-order finite difference scheme

Published:2004-03 Issue:1 Volume:195 Page:320-340
ISSN:0021-9991
Container-title:Journal of Computational Physics
language:en
Short-container-title:Journal of Computational Physics

Author:

Ballestra Luca V.,Sacco Riccardo

Publisher

Elsevier BV

Subject

Computer Science Applications,Physics and Astronomy (miscellaneous),Applied Mathematics,Computational Mathematics,Modelling and Simulation,Numerical Analysis

Reference22 articles.

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2. Hydrodynamic models of semiconductor electron-transport at high fields;Ancona;VLSI Des.,1995

3. Cross-validation of numerical schemes for extended hydrodynamical models of semiconductors;Anile;Math. Models Methods Appl. Sci.,2000

4. Assessment of a high resolution centered scheme for the solution of hydrodynamical semiconductor equations;Anile;SIAM J. Sci. Comput.,2000

5. Extended hydrodynamical model of carrier transport in semiconductors;Anile;SIAM J. Appl. Math.,2000

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