Improvement of memory performance of 3-D NAND flash memory with retrograde channel doping

Author:

Gupta DeepikaORCID,Upadhyay Abhishek Kumar,Beohar Ankur,Vishvakarma Santosh Kumar

Publisher

Elsevier BV

Reference26 articles.

1. J. Hwang, et al., A middle-1X nm NAND flash memory cell (MIXNAND) with highly manufacturable integration technologies, in: Int. Electron Device Meeting, 2011, pp. 9.1.1–9.1.4.

2. Introdction to flash memory;Bez;Proc. IEEE,2003

3. B. Eitan, P. Pavan, I. Bloom, E. Aloni, A. Frommer, D. Finzi, Can NROM, a 2 bit trapping storage NVM cell, give a real challenge to floating gate cells, in: Proc. Solid State Devices and Materials, 1999, pp. 522–524.

4. A low voltage SONOS nonvolatile semiconductor memory technology;White;IEEE Trans. Comp. Pack. Manuf. Technol. A,1997

5. On the go with SONOS;White;IEEE Circuits Dev. Mag.,2000

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