Chip verification of 4 Mbit DRAMs by E-Beam testing-Reference-Cited by-同舟云学术

Chip verification of 4 Mbit DRAMs by E-Beam testing

Published:1990-05 Issue:1-4 Volume:12 Page:27-36
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Kölzer Jochen,Killian Mike,Althoff Klaus,Bonner Fergal,Görlich Siegfried,Otto Johann,Argyo Wilhelm,Fox Fred,Hemmert Heinrich,Sommer Diether

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference17 articles.

1. Electron beam testing of submicron structures;Frosien;J. Electrochem. Society,1988

2. High performance electron optical column for testing ICs with submicron design rules;Frosien;Microelectronic Engineering,1987

3. Calculation of fields and secondary electron trajectories in a new in-lens spectrometer for electron beam testing;Plies;Siemens Forsch.-u. Entwickl. Ber.,1987

4. A 4 Megabit dynamic RAM in submicron CMOS technology with a FOBIC trench cell;Pribyl;Siemens Forsch.-u. Entwickl. Ber,1987

5. Electron beam testing;Wolfgang;Microelectronic Engineering,1986

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2. Dual phase probing technique for IC-internal failure analysis;Microelectronics Reliability;1997-10

3. The role of internal waveform measurements in IC development;Microelectronic Engineering;1994-03

4. Contactless testing of multi-chip modules;Microelectronic Engineering;1994-03

5. Electron-beam MCM testing and probing;IEEE Transactions on Components, Packaging, and Manufacturing Technology: Part B;1994