Submicron patterns formed by reactive ion etching-Reference-Cited by-同舟云学术

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Submicron patterns formed by reactive ion etching

Published:1985-12 Issue:1-4 Volume:3 Page:467-473
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Pilz W.,Sponholz T.,Pongratz S.,Mader H.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference4 articles.

1. High resolution, steep profile resist patterns

2. Polyimide masks for x-ray lithography;Anger;BMFT final report NT 2586/4,1983

3. I. Rangelow, K. Maβeli, L. Niewöhne, R. Kassing, W. Pilz, SIMS and AES investigations to indicate contamination effects by RIE of PIQ layer (this proceeding)

4. Tri level planarisation;Verhaar,1983

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ätztechnik;Halbleiter-Elektronik;1996

2. Anisotropic Etching of Submicronic Resist Structures by Resonant Inductive Plasma Etching;Japanese Journal of Applied Physics;1994-10-15

3. Etching on silicon membranes for sub-0.25-μm x-ray mask manufacturing;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1993-11

4. Silicon Nitride Application as Masks;Si Silicon;1991

5. Applications of Plasma Etching;Plasma-Surface Interactions and Processing of Materials;1990

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