Focused ion beams for lithography and direct doping in VLSI device fabrication-Reference-Cited by-同舟云学术

Focused ion beams for lithography and direct doping in VLSI device fabrication

Published:1986-01 Issue:4 Volume:4 Page:233-249
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Beale M.I.J.,Broughton C.,Deshmukh V.G.I.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference66 articles.

1. Applications of focused ion beams to microlithography;Wagner;Solid State Technol.,1983

2. Finely focused ion beams—New tools for technology;Brown,1983

3. Application of a focused ion beam system to defect repair of VLSI masks;Heard;J. Vac. Sci. Technol. B,1985

4. Focused ion beam repair techniques for clear and opaque defects in masks;Cleaver,1985

5. Semiconductor applications of focused ion beam micromachining;Shaver;Solid State Technology,1985

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