Field induced nanomodification on silicon (100) with scanning tunneling microscopy-Reference-Cited by-同舟云学术

Field induced nanomodification on silicon (100) with scanning tunneling microscopy

Published:1995-02 Issue:1-4 Volume:27 Page:27-30
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Barniol N.,Pe´rez-Murano F.,Abadal G.,Ye J.H.,Aymerich X.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. Atomic and Nanometer-Scale Modification of Materials: Fundamentals and Applications,1993

2. Positioning single atoms with a scanning tunnelling microscope

3. Triangular structures on tungsten diselenide induced and observed by scanning tunneling microscopy

4. Direct writing in Si with a scanning tunneling microscope

5. Field-Induced Nanometer- to Atomic-Scale Manipulation of Silicon Surfaces with the STM

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1. Nanometer Scale Modifications of Si/Sio2 and Si/Sio2/Polymer Surfaces by Scanning Tunneling Microscope;Molecular Crystals and Liquid Crystals;2007-06-11

2. Surface modification of sub-micron spherical SiO2 particles with butanedioic acid for electrophoresis in tetrachloroethylene;Materials Letters;2007-03

3. STM surface modification of the Si–SiO2–polymer system;Microelectronic Engineering;2003-09

4. Electrochemical modifications at the nanometer scale on Si(100) surfaces with Scanning Tunnelling Microscopy;Thin Solid Films;1998-04

5. Field induced oxidation of silicon by SPM: study of the mechanism at negative sample voltage by STM, ESTM and AFM;Applied Physics A: Materials Science & Processing;1998-03-01