High depth to width aspect ratios in thick positive photoresist layers using near UV lithography-Reference-Cited by-同舟云学术

High depth to width aspect ratios in thick positive photoresist layers using near UV lithography

Published:1992-03 Issue:1-4 Volume:17 Page:303-306
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Engelmann G.,Reichl H.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference7 articles.

1. B. Wagner, M. Kreuzer and W. Benecke, Proc. Transducers '91, San Francisco, p. 614.

2. J. Simon, G. Engelmann, O. Ehrmann and H. Reichl, to be published at 2nd Int. Conf. Micro System Technologies 91.

3. R. Jurisch, P. Peitsch, O. Brodersen and J. Simon, to be published at 2nd Int. Conf. Micro System Technologies 91.

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