Evaluation of critical design parameters of an ion projector for 1 Gbit DRAM production-Reference-Cited by-同舟云学术

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Evaluation of critical design parameters of an ion projector for 1 Gbit DRAM production

Published:1995-02 Issue:1-4 Volume:27 Page:323-326
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Bru¨nger W.H.,Lo¨schner H.,Stengl G.,Fallmann W.,Finkelstein W.,Melngailis J.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference5 articles.

1. A. Chalupka et al. EIPB-94, May 31 – June 3, New Orleans, to be published in J. Vac Sci. Techn.

2. E.Hammel et al. EIPB-94, May 31 – June 3, New Orleans, to be published in J. Vac. Sci. Techn.

3. K.N. Leung, Proc. of 14th Symposium ISIAT, Supplement p.1, Tokyo, June 3–5, 91, Ion Engineering Soc. of Japan, Tokyo 91, T. Takagi Ed.

4. L.-M. Buchmann, these proceedings

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1. Recent Developments in Nanofabrication Using Ion Projection Lithography;Small;2005-06

2. Status of Ion Projection Lithography;MRS Proceedings;2000

3. Limits of Conventional Lithography;Nanotechnology;1999

4. Recent contributions to the development of non-optical lithography;Microelectronic Engineering;1996-12

5. Mold-assisted nanolithography: A process for reliable pattern replication;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1996-11

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