Fabrication of quantum wires and dots by X-ray lithography and Ga+ implantation enhanced intermixing-Reference-Cited by-同舟云学术

Fabrication of quantum wires and dots by X-ray lithography and Ga+ implantation enhanced intermixing

Published:1995-02 Issue:1-4 Volume:27 Page:311-316
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Kupka R.K.,Chen Y.,Planel R.,Launois H.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference23 articles.

1. Narrow luminescence linewidth in GaAs single quantum wells by insertion of thin AlAs smoothing layers

2. Differential ion damage and its annealing behavior in AlAs/GaAs heterostructures

3. Optical characterization of selectively intermixed GaAs/GaAlAs quantum wires by Ga+masked implantation

4. Photoluminescence excitation spectroscopy on intermixed GaAs/AlGaAs quantum wires

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