Poly-crystalline silicon thin film devices for large area electronics-Reference-Cited by-同舟云学术

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Poly-crystalline silicon thin film devices for large area electronics

Published:1991-10 Issue:1-4 Volume:15 Page:333-340
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Brotherton SD

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference18 articles.

1. Low Temperature Polysilicon Super-Thin-Film Transistor (LSFT)

2. Recrystallization of amorphized polycrystalline silicon films on SiO2: Temperature dependence of the crystallization parameters

3. High-performance TFTs fabricated by XeCl excimer laser annealing of hydrogenated amorphous-silicon film

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Properties, Analysis and Modelling of Polysilicon TFTs;Advanced Silicon and Semiconducting Silicon-Alloy Based Materials and Devices;2021-05-19

2. Electrical Stability of High-Mobility Microcrystalline Silicon Thin-Film Transistors;Journal of Display Technology;2012-01

3. Polycrystalline silicon thin film transistors;Semiconductor Science and Technology;1995-06-01

4. Photocurrents in poly-Si TFTs;IEE Proceedings - Circuits, Devices and Systems;1994

5. Gate bias instability in polycrystalline silicon thin film transistors formed using various gate dielectrics;Microelectronic Engineering;1992-09

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