Microstructures of GaAs fabricated by finely focused ion beam lithography-Reference-Cited by-同舟云学术

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Microstructures of GaAs fabricated by finely focused ion beam lithography

Published:1989-05 Issue:1-4 Volume:9 Page:277-279
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Shiokawa Takao,Kim Pil Hyon,Hamagaki Manabu,Hara Tamio,Aoyagi Yoshinobu,Toyoda Koichi,Namba Susumu

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. A high‐intensity scanning ion probe with submicrometer spot size

2. Focused ion beam technology and applications

3. Novel Method for Measuring Intensity Distribution of Focused Ion Beams

4. Dot lithography for zero-dimensional quantum wells using focused ion beams

5. Lateral Spreads of Be and Si in GaAs Implanted with a Maskless Ion Implantation System

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