In situ thickness measurements in molecular beam epitaxy using alpha particle energy loss-Reference-Cited by-同舟云学术

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In situ thickness measurements in molecular beam epitaxy using alpha particle energy loss

Published:1997-10 Issue: Volume:94-95 Page:374-378
ISSN:0257-8972
Container-title:Surface and Coatings Technology
language:en
Short-container-title:Surface and Coatings Technology

Author:

Beaudoin M.,Gelbart Z.,Giesen U.,Kelson I.,Levy Y.,MacKenzie J.A.,Pinnington T.,Ritchie S.,SpringThorpe A.J.,Streater R.,Tiedje T.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry

Reference13 articles.

1. InAsP/InGaP All-Ternary Strain-Compensated Multiple Quantum Wells and Their Application to Long-Wavelength Lasers

2. Strain and relaxation effects in InAsP/InP multiple quantum well optical modulator devices grown by metal-organic vapor phase epitaxy

3. Accurate multiple‐quantum‐well growth using real‐time optical flux monitoring

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1. Nuclear techniques for studying thin films;Comprehensive Materials Processing;2024

2. State of the art in thin film thickness and deposition rate monitoring sensors;Reports on Progress in Physics;2005-01-07

3. Determining the profile of textured membranes by the alpha particle energy loss method;Applied Physics Letters;2002-04-08

4. Growth of resonant-cavity enhanced photodetectors by MBE with in situ feedback control using spectroscopic ellipsometry;Journal of Crystal Growth;1999-05

5. In situ real time monitoring of thickness and composition in MBE using alpha particle energy loss;Journal of Crystal Growth;1999-05

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