Influence of fluorine doping on SiOxFy films prepared from a TEOS/O2/CF4 mixture using a plasma enhanced chemical vapor deposition system-Reference-Cited by-同舟云学术

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Influence of fluorine doping on SiOxFy films prepared from a TEOS/O2/CF4 mixture using a plasma enhanced chemical vapor deposition system

Published:2003-05 Issue:1 Volume:168 Page:51-56
ISSN:0257-8972
Container-title:Surface and Coatings Technology
language:en
Short-container-title:Surface and Coatings Technology

Author:

Jeong Sang-Hun,Nishii Junji,Park Hyuk-Ryul,Kim Jae-Keun,Lee Byung-Teak

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry

Reference15 articles.

1. Coatings on Glass;Pulker,1984

2. Structural properties of fluorinated SiO2 thin films

3. Low Dielectric Constant Interlayer Using Fluorine-Doped Silicon Oxide

4. Structure and chemical composition of fluorinated SiO2 films deposited using SiF4/O2 plasmas

5. Inhomogeneous refractive index of SiOXFY thin films prepared by ion beam assisted deposition

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1. Flotation separation of feldspar from quartz using sodium fluosilicate as a selective depressant;Rare Metals;2024-02-06

2. Hygroscopic fluorine‐doped silicon oxide thin‐film‐based large‐area three‐layered moisture barrier using a roll‐to‐roll microwave plasma‐enhanced chemical vapor deposition system;Plasma Processes and Polymers;2022-06-02

3. Quasi In Situ XPS on a SiO_xF_y Layer Deposited on Silicon by a Cryogenic Process;ECS Journal of Solid State Science and Technology;2022-01-01

4. Characterization of fluorinated silica thin films with ultra-low refractive index deposited at low temperature;Thin Solid Films;2015-02

5. Purification of silicon powder by the formation of thin porous layer followed byphoto-thermal annealing;Nanoscale Research Letters;2012-08-08

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