Work function mapping of MoOx thin-films for application in electronic devices-Reference-Cited by-同舟云学术

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Work function mapping of MoOx thin-films for application in electronic devices

Published:2017-12 Issue: Volume:183 Page:99-103
ISSN:0304-3991
Container-title:Ultramicroscopy
language:en
Short-container-title:Ultramicroscopy

Author:

Cauduro André L.F.,dos Reis Roberto,Chen Gong,Schmid Andreas K.,Rubahn Horst-Günter,Madsen Morten

Funder

Office of Science

Basic Energy Sciences

U.S. Department of Energy

Seventh Framework Programme

FP7

REA

Publisher

Elsevier BV

Subject

Instrumentation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference22 articles.

1. Transition metal oxides for organic electronics: energetics, device physics and applications;Meyer;Adv. Mater.,2012

2. Universal energy-level alignment of molecules on metal oxides;Greiner;Nat. Mater.,2012

3. Transition metal oxide work functions: the influence of cation oxidation state and oxygen vacancies;Greiner;Adv. Funct. Mater.,2012

4. Effective hole extraction using MoOx-Al contact in perovskite CH3NH3PbI3 solar cells;Zhao;Appl. Phys. Lett.,2014

5. Efficient silicon solar cells with dopant-free asymmetric heterocontacts;Bullock;Nat. Energy.,2016

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