Analysis of implanted silicon dopant profiles-Reference-Cited by-同舟云学术

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Analysis of implanted silicon dopant profiles

Published:2013-09 Issue: Volume:132 Page:179-185
ISSN:0304-3991
Container-title:Ultramicroscopy
language:en
Short-container-title:Ultramicroscopy

Author:

Prosa T.J.,Olson D.,Geiser B.,Larson D.J.,Henry K.,Steel E.

Publisher

Elsevier BV

Subject

Instrumentation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference33 articles.

1. International Technology Roadmap for Semiconductors, 2011, 〈http://www.itrs.net/〉.

2. Development of certified reference materials of ion-implanted dopants in silicon for calibration of secondary ion mass spectrometers;Simons;Journal of Vacuum Science and Technology B,2007

3. Invited review article: atom probe tomography;Kelly;Review of Scientific Instruments,2007

4. Characterization of ultralow-energy implants and towards the analysis of three-dimensional dopant distributions using three-dimensional atom-probe tomography;Thompson;Journal of Vacuum Science and Technology B,2006

5. Imaging of arsenic cottrell atmospheres around silicon defects by three-dimensional atom probe tomography;Thompson;Science,2007

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5. Quantification of dopant species using atom probe tomography for semiconductor application;Surface and Interface Analysis;2019-10-30

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