Enhancing the defect contrast in ECCI through angular filtering of BSEs-Reference-Cited by-同舟云学术

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Enhancing the defect contrast in ECCI through angular filtering of BSEs

Published:2020-03 Issue: Volume:210 Page:112922
ISSN:0304-3991
Container-title:Ultramicroscopy
language:en
Short-container-title:Ultramicroscopy

Author:

Han Han,Hantschel Thomas,Schulze Andreas,Strakos Libor,Vystavel Tomas,Loo Roger,Kunert Bernardette,Langer Robert,Vandervorst Wilfried,Caymax Matty

Publisher

Elsevier BV

Subject

Instrumentation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference40 articles.

1. A model of crystal plasticity based on the theory of continuously distributed dislocations

2. (Invited) On the Electrical Activity of Extended Defects in High-Mobility Channel Materials

3. Rapid Nondestructive Analysis of Threading Dislocations in Wurtzite Materials Using the Scanning Electron Microscope

4. Rapid misfit dislocation characterization in heteroepitaxial III-V/Si thin films by electron channeling contrast imaging

5. Applications of Electron Channeling Contrast Imaging for the Rapid Characterization of Extended Defects in III–V/Si Heterostructures

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Correlating Structural and Electrical Characteristics of Threading Dislocations in GaN -on- Si Heterostructures and p - n Diodes by Multiple Microscopy Techniques;Physical Review Applied;2023-03-24

2. Rapid and facile characterization of dislocations in cross-sectional GaAs/Si films using electron channeling contrast imaging;AOPC 2022: Optoelectronics and Nanophotonics;2023-01-23

3. Crystalline defect analysis in epitaxial Si0.7Ge0.3 layer using site-specific ECCI-STEM;Micron;2021-11

4. Epitaxial Ge-on-Nothing and Epitaxial Ge on Si-on-Nothing as Virtual Substrates for 3D Device Stacking Technologies;ECS Journal of Solid State Science and Technology;2021-08-01

5. A demonstration of donor passivation through direct formation of V-Asi complexes in As-doped Ge1−xSnx;Journal of Applied Physics;2020-05-21

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