Damage-induced voltage alteration (DIVA) contrast in SEM images of ion-irradiated semiconductors-Reference-Cited by-同舟云学术

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Damage-induced voltage alteration (DIVA) contrast in SEM images of ion-irradiated semiconductors

Published:2019-09 Issue: Volume:204 Page:6-9
ISSN:0304-3991
Container-title:Ultramicroscopy
language:en
Short-container-title:Ultramicroscopy

Author:

Jóźwik Iwona,Barcz Adam,Dąbrowska Elżbieta,Dumiszewska Ewa,Michałowski Paweł Piotr

Funder

National Science Centre, Poland

Publisher

Elsevier BV

Subject

Instrumentation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference21 articles.

1. Very-low-energy electron microscopy of doped semiconductors

2. Secondary electron doping contrast: Theory based on scanning electron microscope and Kelvin probe force microscopy measurements

3. Scanning electron microscopy of dopant distribution in semiconductors

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Depth-distribution of resistivity within ion-irradiated semiconductor layers revealed by low-kV scanning electron microscopy;Materials Science in Semiconductor Processing;2023-10

2. Direct visualization of highly resistive areas in GaN by means of low-voltage scanning electron microscopy;Materials Science in Semiconductor Processing;2022-02

3. Resistivity contrast imaging in semiconductor structures using ultra-low energy scanning electron microscopy;Ultramicroscopy;2021-09

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