Carrier profiling with fast Fourier transform scanning spreading resistance microscopy: A case study for Ge, GaAs, InGaAs, and InP
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference28 articles.
1. W. Vandervorst, M. Meuris, Method for resistance measurements on a semiconductor element with controlled probe pressure, US5369372A, 1994.
2. Scanning spreading resistance microscopy and spectroscopy for routine and quantitative two-dimensional carrier profiling;Eyben;J. Vac. Sci. Technol. B Microelectron. Nanom. Struct.,2002
3. One- and two-dimensional carrier profiling in semiconductors by nanospreading resistance profiling;De Wolf;J. Vac. Sci. Technol. B Microelectron. Nanom. Struct.,1996
4. Evolution of metastable phases in silicon during nanoindentation: mechanism analysis and experimental verification;Mylvaganam;Nanotechnology,2009
5. Analysis and modeling of the high vacuum scanning spreading resistance microscopy nanocontact on silicon;Eyben;J. Vac. Sci. Technol. B Microelectron. Nanom. Struct.,2010
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