Quantitative measurement of mean inner potential and specimen thickness from high-resolution off-axis electron holograms of ultra-thin layered WSe 2-Reference-Cited by-同舟云学术

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Quantitative measurement of mean inner potential and specimen thickness from high-resolution off-axis electron holograms of ultra-thin layered WSe 2

Published:2017-07 Issue: Volume:178 Page:38-47
ISSN:0304-3991
Container-title:Ultramicroscopy
language:en
Short-container-title:Ultramicroscopy

Author:

Winkler Florian,Tavabi Amir H.,Barthel Juri,Duchamp Martial,Yucelen Emrah,Borghardt Sven,Kardynal Beata E.,Dunin-Borkowski Rafal E.

Funder

German Science Foundation (DFG)

European Research Council

Publisher

Elsevier BV

Subject

Instrumentation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference45 articles.

1. Role of metal contacts in designing high-performance monolayer n-type WSe2 field effect transistors;Liu;Nano Lett.,2013

2. High mobility ambipolar MoS2 field-effect transistors: substrate and dielectric effects;Bao;Appl. Phys. Lett.,2013

3. Flexible and transparent MoS2 field-effect transistors on hexagonal boron nitride-graphene heterostructures;Lee;ACS Nano,2013

4. Photoluminscence emission and raman response of monolayer MoS2, MoSe2 and WSe2;Tonndorf;Opt. Express,2013

5. Giant spin-orbit-induced spin splitting in two-dimensional transition-metal dichalcogenide semiconductors;Zhu;Phys. Rev. B,2011

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