Dislocations at coalescence boundaries in heteroepitaxial GaN/sapphire studied after the epitaxial layer has completely coalesced-Reference-Cited by-同舟云学术

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Dislocations at coalescence boundaries in heteroepitaxial GaN/sapphire studied after the epitaxial layer has completely coalesced

Published:2021-12 Issue: Volume:231 Page:113258
ISSN:0304-3991
Container-title:Ultramicroscopy
language:en
Short-container-title:Ultramicroscopy

Author:

O'Hanlon T.J.,Zhu T.,Massabuau F.C.-P.,Oliver R.A.

Funder

European Research Council

Seventh Framework Programme

Engineering and Physical Sciences Research Council

Publisher

Elsevier BV

Subject

Instrumentation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference31 articles.

1. Dislocations and their reduction in GaN;Bennett;Mater. Sci. Technol.,2010

2. Crystal Interfaces. Part II. Finite Overgrowths;Van Der Merwe;J. Appl. Phys.,1963

3. Defects associated with the accommodation of misfit between crystals;Matthews;J. Vac. Sci. Technol.,1975

4. GaN growth on sapphire;Melton;J. Cryst. Growth,1997

5. Growth defects in GaN films on sapphire: the probable origin of threading dislocations;Ning;J. Mater. Res.,1996

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1. Crack-Free High-Composition (>35%) Thick-Barrier (>30 nm) AlGaN/AlN/GaN High-Electron-Mobility Transistor on Sapphire with Low Sheet Resistance (<250 Ω/□);Crystals;2023-09-30

2. MOCVD ile büyütülen GaN p-i-n yapısındaki sarı ışık merkezinin elektro-optik ölçümlerle incelenmesi;Journal of the Institute of Science and Technology;2022-03-01

3. Study on the processing characteristics of sapphire wafer polished with different properties plates;AIP Advances;2022-02-01

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