In situ characterization of vacancy ordering in Ge-Sb-Te phase-change memory alloys-Reference-Cited by-同舟云学术

In situ characterization of vacancy ordering in Ge-Sb-Te phase-change memory alloys

Published:2022-09 Issue: Volume: Page:
ISSN:2667-3258
Container-title:Fundamental Research
language:en
Short-container-title:Fundamental Research

Author:

Jiang Ting-Ting,Wang Xu-Dong,Wang Jiang-Jing,Zhang Han-Yi^ORCID,Lu Lu^ORCID,Jia Chunlin^ORCID,Wuttig Matthias^ORCID,Mazzarello Riccardo^ORCID,Zhang Wei^ORCID,Ma En^ORCID

Publisher

Elsevier BV

Subject

Multidisciplinary

Reference69 articles.

1. Phase-change materials for rewriteable data storage;Wuttig;Nat. Mater.,2007

2. Designing crystallization in phase-change materials for universal memory and neuro-inspired computing;Zhang;Nat. Rev. Mater.,2019

3. Memory devices and applications for in-memory computing;Sebastian;Nat. Nanotechnol.,2020

4. Reducing the stochasticity of crystal nucleation to enable subnanosecond memory writing;Rao;Science,2017

5. All-optical spiking neurosynaptic networks with self-learning capabilities;Feldmann;Nature,2019

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