On the operating speed and energy efficiency of GaN-based monolithic complementary logic circuits for integrated power conversion systems-Reference-Cited by-同舟云学术

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On the operating speed and energy efficiency of GaN-based monolithic complementary logic circuits for integrated power conversion systems

Published:2021-11 Issue:6 Volume:1 Page:661-671
ISSN:2667-3258
Container-title:Fundamental Research
language:en
Short-container-title:Fundamental Research

Author:

Zheng Zheyang^ORCID,Xu Han^ORCID,Zhang Li^ORCID,Chen Kevin J.

Funder

Science, Technology and Innovation Commission of Shenzhen Municipality

Publisher

Elsevier BV

Reference27 articles.

1. GaN-on-Si power technology: devices and applications;Chen;IEEE Trans. Electron Devices.,2017

2. Planar GaN power integration – The world is flat;Chen;IEEE Int. Electron Devices Meet. IEDM,2020

3. High-speed, high-reliability GaN power device with integrated gate driver;Tang,2018

4. Monolithic integration of gate driver and protection modules with p-GaN gate power HEMTs;Xu;IEEE Trans. Ind. Electron.,2021

5. First monolithic integration of GaN-based enhancement mode n-channel and p-channel heterostructure field effect transistors;Hahn,2014

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Development of Enhancement-Mode GaN p-FET With Post-Etch Wet Treatment on p-GaN Gate HEMT Epi-Wafer;IEEE Transactions on Electron Devices;2024-04

2. A novel one-time-programmable memory unit based on Schottky-type p-GaN diode;Journal of Semiconductors;2024-03-01

3. p-GaN gate power HEMT heterostructure as a versatile platform for extremely wide-temperature-range (X-WTR) applications;Applied Physics Letters;2024-01-22

4. Polarization enhanced two-dimensional hole gas in III-nitride heterostructures for cryogenically operated GaN-based p-channel field effect transistors;Applied Physics Letters;2023-12-25

5. GaN Power Integration Technology and Its Future Prospects;IEEE Transactions on Electron Devices;2023

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