Correlation between photoluminescence efficiency and density of paramagnetic defects in Er-doped hydrogenated amorphous silicon-Reference-Cited by-同舟云学术

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Correlation between photoluminescence efficiency and density of paramagnetic defects in Er-doped hydrogenated amorphous silicon

Published:2001-04 Issue:2-3 Volume:282 Page:321-324
ISSN:0022-3093
Container-title:Journal of Non-Crystalline Solids
language:en
Short-container-title:Journal of Non-Crystalline Solids

Author:

Konstantinova E.A.,Kamenev B.V.,Kashkarov P.K.,Timoshenko V.Yu.,Kudoyarova V.Kh.,Terukov E.I.

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference12 articles.

1. The mechanisms of electronic excitation of rare earth impurities in semiconductors

2. Defect-related Auger excitation of erbium ions in amorphous silicon

3. Impurity enhancement of the 1.54‐μm Er3+luminescence in silicon

4. Optical activation and excitation mechanisms of Er implanted in Si

5. Optical Activation of Er3+Implanted in Silicon by Oxygen Impurities

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Influence of Formation Conditions on Structure and Properties of Paramagnetic Centers in Polymorphous Silicon Films;Applied Magnetic Resonance;2016-04-07

2. Erbium Ion Luminescence of Silicon Nanocrystal Layers in a Silicon Dioxide Matrix Measured under Strong Optical Excitation;Physics of the Solid State;2005

3. High-efficiency erbium ion luminescence in silicon nanocrystal systems;Physics of the Solid State;2004-01

4. Photoluminescence of Er3+ ions in layers of quasi-ordered silicon nanocrystals in a silicon dioxide matrix;Journal of Experimental and Theoretical Physics;2003-12

5. De-excitation mechanisms of Er3+ in Er-doped hydrogenated amorphous silicon prepared by electron cyclotron resonance plasma enhanced chemical vapor deposition;Journal of Non-Crystalline Solids;2003-12

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