Metastability in tritiated amorphous silicon-Reference-Cited by-同舟云学术

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Metastability in tritiated amorphous silicon

Published:2002-04 Issue: Volume:299-302 Page:476-481
ISSN:0022-3093
Container-title:Journal of Non-Crystalline Solids
language:en
Short-container-title:Journal of Non-Crystalline Solids

Author:

Zukotynski S,Gaspari F,Kherani N,Kosteski T,Law K,Shmayda W.T,Tan C.M

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference20 articles.

1. Technology and Application of Amorphous Silicon;Street,2000

2. Reversible conductivity changes in discharge‐produced amorphous Si

3. A Quantitative Model for the Metastable Defect Creation in Amorphous Semiconductors by Kev-Electron Irradiation

4. Defect relaxation in amorphous silicon: Stretched exponentials, the Meyer-Neldel rule, and the Staebler-Wronski effect

5. An Infrared and Luminescence Study of Tritiated Amorphous Silicon

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1. The radiation damage of crystalline silicon PN diode in tritium beta-voltaic battery;Applied Radiation and Isotopes;2014-08

2. Amorphous silicon based betavoltaic devices;MRS Proceedings;2013

3. Correlation of a-Si:H properties with hydrogen distribution;2010 35th IEEE Photovoltaic Specialists Conference;2010-06

4. Time evolution of charged defect states in tritiated amorphous silicon;Journal of Applied Physics;2007-11-15

5. Modeling of light-induced defect creation in hydrogenated amorphous silicon;Physical Review B;2007-08-02

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