Properties of a-SiNx:H films
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials
Reference38 articles.
1. Two-Phase Structure of a-Si1-xNx:H Fabricated by Microwave Glow-Discharge Technique
2. Characterization of low pressure chemically vapour- deposited thin silicon nitride films
3. Room temperature deposition of silicon nitride films using very low frequency (50Hz) plasma CVD
4. Photoconductive a-SiNx:H films deposited at high substrate temperatures
5. Low temperature deposition of amorphous silicon oxide and silicon nitride films
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1. Photoluminescence from silicon nitride alloys;SPIE Proceedings;2011-09-08
2. Photoluminescence from silicon nitride—no quantum effect;Journal of Applied Physics;2011-07-15
3. Effect of substrate bias on properties of silicon nitride films prepared by activated reactive evaporation;Thin Solid Films;1992-11
4. Anomalous Behavior of Semi-Insulating Silicon Rich Amorphous Silicon Nitride;MRS Proceedings;1992
5. A Thermally Stable Silicon Rich Amorphous Silicon Nitride Alloy for Electronic Device Applications;MRS Proceedings;1992
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