Photoconductive a-SiNx:H films deposited at high substrate temperatures
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials
Reference9 articles.
1. Wide Optical-Gap, Photoconductive a-SixN1-x:H
2. Properties of Amorphous Films Prepared from SiH4-N2-H2Gas Mixture
3. Persistent photoconductivity ina−Si:H/a−SiNx:Hlayered structures
4. Effects of rf Power and Substrate Temperature on Properties of a-SiNx:H Films Prepared by Glow-Discharge of SiH4–N2–H2
5. Luminescence studies of plasma-deposited hydrogenated silicon
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1. Characterization of SnO2/Cu/SnO2 multilayers for high performance transparent conducting electrodes;Thin Solid Films;2014-07
2. Low-temperature PECVD-deposited silicon nitride thin films for sensor applications;Surface and Coatings Technology;2001-07
3. Observation of Light-Induced Phenomena by Photoluminescence and Optically Detected Magnetic Resonance in a-Si1-xNx:H;Journal of the Physical Society of Japan;1991-05-15
4. Properties of a-SiNx:H films;Journal of Non-Crystalline Solids;1987-02
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