Properties of compensated and doped amorphous SiC and GeSi alloy films-Reference-Cited by-同舟云学术

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Properties of compensated and doped amorphous SiC and GeSi alloy films

Published:1986-10 Issue:1-2 Volume:87 Page:1-29
ISSN:0022-3093
Container-title:Journal of Non-Crystalline Solids
language:en
Short-container-title:Journal of Non-Crystalline Solids

Author:

Banerjee P.K.,Pereira J.M.T.,Mitra S.S.,Dutta R.

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference41 articles.

1. Conduction in non-crystalline systems

2. Infrared absorption in amorphous germanium

3. Far-infrared absorption in amorphous III-V compound semiconductors

4. Far infrared absorption of amorphous GaAs and Ge

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Structural design of BaSi₂ solar cells with a-SiC electron-selective transport layers;Japanese Journal of Applied Physics;2023-01-06

2. Indium doping of amorphous SiC:H films prepared by reactive magnetron co-sputtering;Thin Solid Films;1999-09

3. Synthesis and characterization of SiC:H ultrafine powder generated in an argon–silane–methane low-pressure radio-frequency discharge;Journal of Applied Physics;1998-06-15

4. Structural and chemical analysis of C : H,O /Si : H,O multilayers deposited by reactive RF sputtering;Solar Energy Materials and Solar Cells;1993-11

5. Electrical and optical properties of aluminum-doped amorphous silicon carbide films;Applied Surface Science;1991-01

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