A full coupled drift-diffusion-Poisson simulation of a GFET

Author:

Nastasi GiovanniORCID,Romano VittorioORCID

Publisher

Elsevier BV

Subject

Applied Mathematics,Modeling and Simulation,Numerical Analysis

Reference43 articles.

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2. Cross validation of discontinuous Galerkin method and Monte Carlo simulations of charge transport in graphene on substrate;Coco;Ricerche Mat,2017

3. High-field mobility in graphene on substrate with a proper inclusion of the Pauli exclusion principle;Coco;AAPP Atti Accad Pelorit Pericol Classe Sci Fisiche Mat Nat,2019

4. Simulation of bipolar charge transport in graphene by using a discontinuous Galerkin method;Majorana;Commun Comput Phys,2019

5. Simulation of bipolar charge transport in graphene on h-BN;Coco;COMPEL - Int J Comput Math Electr Electron Eng,2020

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1. Optimized quantum drift diffusion model for a resonant tunneling diode;Journal of Non-Equilibrium Thermodynamics;2024-01-23

2. Simulation of a GNR-FET;Mathematics in Industry;2024

3. Recombination Time in Drift-Diffusion Models of Graphene Field-Effect Transistors;2023 14th Spanish Conference on Electron Devices (CDE);2023-06-06

4. Electron Transport in Graphene Nanoribbons;Springer INdAM Series;2022-09-01

5. Modeling Hydrodynamic Charge Transport in Graphene;Materials;2022-06-10

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