Simulation of a GNR-FET
Author:
Publisher
Springer Nature Switzerland
Link
https://link.springer.com/content/pdf/10.1007/978-3-031-54517-7_4
Reference18 articles.
1. Schwierz, F.: Graphene transistors. Nat. Nanotechnol. 5, 487–496 (2010)
2. Bresciani, M., Palestri, P., Esseni, D., Selmi, L.: Simple and efficient modeling of the E-k relationship and low-field mobility in Graphene Nano-Ribbons. Solid-State Electron. 54, 1015–1021 (2010)
3. Dugaev, V.K., Katsnelson, M.I.: Edge scattering of electrons in graphene: Boltzmann equation approach to the transport in graphene nanoribbons and nanodisks. Phys. Rev. B 88, 235432 (2013)
4. Han, M.Y., Özyilmaz, B., Zhang, Y., Kim, P.: Energy band-gap engineering of graphene nanoribbons. Phys. Rev. Lett. 98, 206805 (2007)
5. Champlain, J.G.: A first principles theoretical examination of graphene-based field effect transistors. J. Appl. Phys. 109, 084515 (2011)
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