Molecular-beam-epitaxial growth of Ga1−xInxSb on GaAs substrates
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference25 articles.
1. Mid‐wave infrared diode lasers based on GaInSb/InAs and InAs/AlSb superlattices
2. Midwave infrared stimulated emission from a GaInSb/InAs superlattice
3. Far‐infrared photoresponse of the InAs/GaInSb superlattice
4. Resonant tunneling in AlSb‐GaSb‐AlSb and AlSb‐InGaSb‐AlSb double barrier heterostructures
5. Optimum growth temperature determination for GaInSb/InAs strained layer superlattices
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