Far‐infrared photoresponse of the InAs/GaInSb superlattice
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.105255
Reference8 articles.
1. Proposal for strained type II superlattice infrared detectors
2. Long‐wavelength infrared detectors based on strained InAs–Ga1−xInxSb type‐II superlattices
3. Observation of semiconductor‐semimetal transition in InAs‐GaSb superlattices
4. Optical absorption and x‐ray diffraction in narrow‐band‐gap InAs/GaSb superlattices
5. Growth and characterization of InAs/Ga1−xInxSb strained‐layer superlattices
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1. Significantly extended cutoff wavelength of very long-wave infrared detectors based on InAs/GaSb/InSb/GaSb superlattices;Applied Physics Letters;2017-10-16
2. Study of InAs/InAsSb type-II superlattices using high-resolution x-ray diffraction and cross-sectional electron microscopy;Journal of Crystal Growth;2013-10
3. Trapping of free electrons in III-V superlattices;Journal of Applied Physics;2012-11
4. Evaluation of the In concentration of an InxGa1−xSb alloy layer in cross-sectional HRTEM images of III–V semiconductor superlattices;Journal of Physics D: Applied Physics;2010-07-29
5. Type-II InAs/GaInSb superlattices for infrared detection: an overview;SPIE Proceedings;2005-05-31
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