In situ composition control of III-As1 − xSbx alloys during molecular beam epitaxy using line-of-sight mass spectrometry
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference16 articles.
1. Molecular-beam epitaxy growth of high-performance midinfrared diode lasers
2. Improved higfet using Ti/Pt/Au ohmic contacts to beryllium implanted GaAsSb
3. Molecular-beam epitaxial growth and interface characteristics of GaAsSb on GaAs substrates
4. Incorporation of Sb in GaAs1−xSbx (x<0.15) by molecular beam epitaxy
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2. Molecular-Beam Epitaxy of Antimonides for Optoelectronic Devices;Molecular Beam Epitaxy;2019-02-08
3. Incorporation of Sb and As in MBE grown GaAsxSb1−x layers;APL Materials;2017-03
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