High concentration n-type doping in Si layers epitaxially grown by ultra-high vacuum chemical vapor deposition with cracking heater
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference9 articles.
1. Arbitrary doping profiles produced by Sb‐doped Si MBE
2. Molecular beam epitaxy of silicon: Effects of heavy Sb doping
3. Low‐temperature Si molecular beam epitaxy: Solution to the doping problem
4. Sb surface segregation and doping in Si(100) grown at reduced temperature by molecular beam epitaxy
5. Insitudoping in silicon selective epitaxial growth at 800 °C by ultralow‐pressure chemical vapor deposition
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4. A Novel Fabrication Technique of Ultrathin and Relaxed SiGe Buffer Layers with High Ge Fraction for Sub-100 nm Strained Silicon-on-Insulator MOSFETs;Japanese Journal of Applied Physics;2001-04-30
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