Laterally nonuniform Ga segregation at interfaces during MBE growth
Author:
Funder
Deutsche Forschungsgemeinschaft
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference18 articles.
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4. Ga segregation and the effect of Si and Ge interlayers at the GaAs(100)/AlAs heterostructure
5. Long range gallium segregation in the AlAs layers of GaAs/AlAs superlattices
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1. Effects of Growth Temperature on Electrical Properties of InP-based Pseudomorphic Resonant Tunneling Diodes with Ultrathin Barriers Grown by Molecular Beam Epitaxy;Japanese Journal of Applied Physics;2001-05-15
2. A comprehensive atomic-level simulator for AlGaAs/GaAs [001] MBE;Compound Semiconductors 1997. Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors;1997
3. 4.2.5 References for 4.1 and 4.2;Landolt-Börnstein - Group III Condensed Matter
4. 4.2.2.1 Excitonic data and effects;Landolt-Börnstein - Group III Condensed Matter
5. 4.2.1 GaN quantum wells and related structures;Landolt-Börnstein - Group III Condensed Matter
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