Lateral growth rate control of GaAs on patterned substrates by CCl4 and CBr4 during MOCVD-Reference-Cited by-同舟云学术

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Lateral growth rate control of GaAs on patterned substrates by CCl4 and CBr4 during MOCVD

Published:1997-01 Issue:1-4 Volume:170 Page:665-668
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Kim Seong-Il,Kim Moo-Sung,Kim Yong,Hwang Seong-Min,Min Byung-Don,Son Chang Sik,Kim Eun Kyu,Min Suk-Ki

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference12 articles.

1. The use of chloride based precursors in metalorganic vapor phase epitaxy

2. A study of the orientation dependence of Ga(Al)As growth by MOVPE

3. Patterned quantum well heterostructures grown by OMCVD on non-planar substrates: Applications to extremely narrow SQW lasers

4. Low-threshold quantum well lasers grown by metalorganic chemical vapor deposition on nonplanar substrates

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Te surfactant effects on the morphology of patterned (001) GaAs homoepitaxy;Journal of Crystal Growth;2004-09

2. Sb and Bi surfactant effects on homo-epitaxy of GaAs on () patterned substrates;Journal of Crystal Growth;2004-05

3. Effects of Br and Cl on organometallic vapor phase epitaxial growth and ordering in GaInP;Journal of Applied Physics;2004-03

4. Effects of Surfactants N and Br on Ordering in GaInP;MRS Proceedings;2003

5. Facet Evolution of Al0.5Ga0.5As/GaAs Multilayers Grown on Mesa-Patterned GaAs Substrate;Japanese Journal of Applied Physics;1999-09-15

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