Electrical activation of carbon δ-doped (Al,Ga)As grown by metalorganic vapour-phase epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference13 articles.
1. Controlled carbon doping of GaAs by metalorganic vapor phase epitaxy
2. Negative differential resistance of a delta-doping-induced double-barrier quantum-well diode at room temperature
3. Review of nipi structures of photon detection
4. Molecular beam epitaxy engineered III-V semiconductor structures for low-power optically addressed spatial light modulators
5. Ultrahigh doping of GaAs by carbon during metalorganic molecular beam epitaxy
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Si and C δ-doping for device applications;Journal of Crystal Growth;1998-12
2. In0.2Ga0.8As/GaAs quantum well laser with C doped cladding and ohmic contact layers;Journal of Electronic Materials;1998-09
3. Recent progress in δ-doping of III–V semiconductors grown by metal organic vapour phase epitaxy;Solid-State Electronics;1997-09
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