Epitaxy of (Ga, Mn)As, a new diluted magnetic semiconductor based on GaAs-Reference-Cited by-同舟云学术

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Epitaxy of (Ga, Mn)As, a new diluted magnetic semiconductor based on GaAs

Published:1997-05 Issue: Volume:175-176 Page:1069-1074
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Shen A.,Ohno H.,Matsukura F.,Sugawara Y.,Akiba N.,Kuroiwa T.,Oiwa A.,Endo A.,Katsumoto S.,Iye Y.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference16 articles.

1. Optical and electrical properties of Mn‐doped GaAs grown by molecular‐beam epitaxy

2. Paramagnetism of the manganese acceptor in gallium arsenide

3. Diluted magnetic III-V semiconductors

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2. Impact of Bismuth Incorporation into (Ga,Mn)As Dilute Ferromagnetic Semiconductor on Its Magnetic Properties and Magnetoresistance;Materials;2023-01-13

3. Spin–orbit torque switching in a single (Ga,Mn)(As,P) layer with perpendicular magnetic anisotropy;APL Materials;2021-10-01

4. Manganese doping for enhanced magnetic brightening and circular polarization control of dark excitons in paramagnetic layered hybrid metal-halide perovskites;Nature Communications;2021-06-09

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