High temperature (Ga)InAsP/high band gap GaInAsP barriers 1.3 μm SL-MQW lasers grown by gas source MBE
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference15 articles.
1. Dominant mechanisms for the temperature sensitivity of 1.3 μm InP‐based strained‐layer multiple‐quantum‐well lasers
2. Effect of barrier recombination on the high temperature performance of quaternary multiquantum well lasers
3. Progress in long-wavelength strained-layer InGaAs(P) quantum-well semiconductor lasers and amplifiers
4. Proc. 7th Eur. MBE Workshop;Pagnod-Rossiaux,1993
5. Very low threshold current 1.3μm InAsyP1−y/InP BH strained-layer quantum well laser diodes grown by MOCVD
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1. Coherence-collapse threshold of 1.3-μm semiconductor DFB lasers;IEEE Photonics Technology Letters;2003-01
2. All-solid-source molecular beam epitaxy: technology and applications;SPIE Proceedings;2002-09-09
3. 1.55 µm InAsP/InGaAsP Strained Multiple-Quantum-Well Laser Diodes Grown by Solid-Source Molecular Beam Epitaxy;Japanese Journal of Applied Physics;2002-02-15
4. High temperature 10 Gbit/s directly modulated 1.3 [micro sign]m DFB lasers using InAsP/InGaAsP materials;Electronics Letters;2002
5. InAsyP1−y/InP quantum wells grown by solid source molecular beam epitaxy using As2 and As4;Journal of Crystal Growth;2002-01
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